| Contents: |
Chapter 1 Temperature asa Reliability Factor
1. Background
2. Activation Energy-basedModels
3. Reliability PredictionMethods
4. How Should Design, ThermalManagement, and Reliability Engineers Work Together?
5. Summary
Chapter 2 Temperature Dependenceof
Microelectronic PackageFailure Mechanisms
1. Temperature Dependenciesof Failure
Mechanisms in the Die Metalization
1.1 Corrosion of Metalizationand Bond Pads
1.2 Electromigration
1.3 Hillock Formation
1.4 Metalization Migration
1.5 Contact Spiking
1.6 Constraint Cavitationof Conductor
Metalization
2. Effect of Hydrogen andHelium Ambients
on Metalization vs Temperature
3. Temperature Dependenciesof Failure
Mechanisms in the DeviceOxide
3.1 Slow Trapping (OxideCharge Trapping
and Detrapping)
3.2 Gate Oxide Breakdown
4. Temperature Dependenciesof Failure
Mechanisms in the Device
4.1 Ionic Contamination
4.2 Second Breakdown
4.3 Forward Second Breakdown
4.4 Surface-charge Spreading
5. Temperature Dependenciesof Failure
Mechanisms in the DeviceOxide Interface
5.1 Hot Electrons
Chapter 3 Temperature Dependenceof
Microelectronic PackageFailure Mechanisms
1. Temperature Dependenciesof Failure
Mechanisms in the Die andDie/Substrate Attach
1.1 Die Fracture
1.2 Die Thermal Breakdown
1.3 Die and Substrate AdhesionFatigue
2. Temperature Dependenciesof Failure
Mechanisms in First-levelInterconnections
2.1 Wirebonded Interconnections
2.2 Tape Automated Bonds
2.3 Flip-chip Joints
3. Temperature Dependenciesof Failure
Mechanisms in the PackageCase
3.1 Cracking in PlasticPackages
3.2 Reversion or Depolymerizationof Polymeric Bonds
3.3 Whisker and DendriticGrowth
4. Temperature Dependenceof Failure
Mechanisms in Lid Seals
4.1 Thermal Fatigue of LidSeal
5. Temperature Dependenciesof Failure
Mechanisms in Leads andLead Seals
5.1 Mishandling and Defect-induced
Lead-seal Failure
5.2 Post-forming Defect-localizedLead
Corrosion
5.3 Stress Corrosion ofLeads at the
Lead-lead Seal Interface
5.4 Lead Solder-joint Fatigue
Chapter 4 Electrical ParameterVariations in
Bipolar Devices
1. Temperature Dependenceof Bipolar Junction Transistor Parameters
1.1 Intrinsic Carrier Concentration,
Thermal Voltage, and Mobility
1.2 Current Gain
1.3 BJT Inverter VoltageTransfer
Characteristic (VTC)
1.4 Collector-Emitter SaturationVoltage
Chapter 5 Electrical ParameterVariations in
MOSFET Devices
1. Temperature Dependenceof MOSFET Parameters
1.1 Threshold Voltage
1.2 Mobility
Chapter 6 a Physics-of-failureApproach to
IC Burn-In
1. Burn-In Philosophy
2. Problems with PresentApproach to Burn-In
3. A Physics-of-FailureApproach to Burn-In
3.1 Understanding Steady-stateTemperature Effects
Chapter 7 Derating Guidelinesfor
Temperature-tolerant Designof
Microelectronic Devices
1. Problems with the PresentApproach to
Device Derating
1.1 Dependency on OtherThermal Parameters
1.2 Interaction of Thermaland non-Thermal Stresses
1.3 Low Temperature DeviceDegradation
1.4 Variations in DeviceTypes
2. An Alternative Approachfor Thermally
Tolerant Design
3. Stress Limits for FailureMechanisms in
Die Metalization
3.1 Corrosion of Die Metalization
3.2 Electromigration
3.3 Hillock Formation
3.4 Metalization Migration
3.5 Constraint Cavitationof Conductor
Metalization
4. Stress Limits for FailureMechanisms in
Device Oxide
4.1 Slow Trapping
5. Stress Limits for FailureMechanisms in
the Device
5.1 Ionic contamination
6. Stress Limits for FailureMechanisms in
the Device Oxide Interface
6.1 Hot Electrons
Chapter 8 Derating Guidelinesfor
Temperature-tolerant Designof Electronic Packages
1. Stress Limits for FailureMechanisms in
the Die and Die/substrateAttach
1.1 Die Fracture
1.2 Die Thermal Breakdown
1.3 Die and Substrate AdhesionFatigue
2. Stress Limits for FailureMechanisms in
First-level Interconnects
2.1 Wirebonded interconnections
2.2 Tape Automated Bonds
2.2 Flip-chip Bonds
3. Stress Limits for FailureMechanisms in
the Package Case
3.1 Cracking in PlasticPackages
3.2 Reversion or depolymerizationof polymeric bonds
3.3 Whisker and dendriticgrowth
3.4 Modular case fatiguefailure
4. STRESS LIMITS FOR FAILUREMECHANISMS IN
LID SEALS
4.1 Thermal Fatigue of LidSeal
Chapter 9 Conclusions
1. Steady State TemperatureEffects
References
Index
Permissions |
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| Influence ofTemperature on Microelectronics and System Reliability |
| Edited by Pradeep Lall,Michael Pecht, and Edward Hakim, 336pp., 1997, ISBN: 0849394503 |
 |
In this book - the author treats in detail, the use of manipulating temperaturein electronic equipment, to achieve reliability goals. Temperature is afundamental parameter associated with the performance and reliability ofelectronic equipment. There has been a common belief that reliable electronicscan be achieved by lowering temperature. |
Sloganssuch as "lower the temperature by 10 and double reliability" have becomethe rules of thumb for some designers, without regard to the cost-effectiveness,and actual reliability benefits and auditability. The belief in the harmfuleffects of temperature has woven itself into today's screening and thermalmanagement processes.
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| Various sections of the book address the steady state and cyclic temperatureeffects on electrical parameters and the reliability of both bipolar andMOSFET devices; identify models quantifying the temperature effects onpackage elements; and address the impacts of various design for temperaturetrade-offs on electronic systems. Temperature-related models are assessedin terms of their use for determining the maximum and minimum allowabletemperature stresses for a given system architecture. Derating methodsare also reviewed. The purpose of this book is to raise the level of understandingof thermal design criteria. The goal is to provide the product design teamswith sufficient knowledge to help them evaluate system-cooling trade-offsand the effects of operating temperature. |
| Features |
- Presents the effect of temperaturein the context of microelectronics reliability, covering damage mechanismsin the temperature range of -55 C to 150 C.
- Uses the cumulative effect ofcompeting failure processes on device life to determine appropriate valuesof operating temperature and non-temperature related stress.
- Derives stress-margin curvesof life for failure mechanisms versus dependencies on both temperature,non-temperature stresses and defects.
- Assists the reader in evaluatingthe life cycle reliability, cost, and weight trade-offs associated withcooling of electronic equpiment.
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| $74.95 |
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